日本东京工业大学和早稻田大学的一个联合研究小组开发出一种新型薄膜单晶硅太阳能电池生产技术，这项新技术有望极大降低大规模生产的成本，同时还能保持较高的电池效率。
科学家们声称，他们能研制出一种优质薄膜单晶硅，其厚度约为10μm、且晶体缺陷密度被降低。其硅密度降低到硅晶片的水平，而增长速度超出先前的10倍以上。
研究人员通过一种区域加热重结晶方法(ZHR法)，将表面粗糙度降低到0.2-0.3 nm。基底然后以高速生长，生产出具有高晶体质量的单晶薄膜。利用双层多孔硅层可以很容易将长好的薄膜剥离下来，基底可重复使用或作为薄膜生长的蒸发源，从而大幅减少了材料损失。这一工艺同时显示，表面粗糙度在0.1-0.2 nm范围以内对晶体缺陷的形成具有重要影响。
科学家们在声明中表示，这种薄膜硅作为低成本的底部电池，应用在串联型太阳能电池中，其效率有可能超过30%。
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